Research Interest:

Our research is in the synthesis of organometallic compounds and their application in high-tech electronic materials and in catalysis. Thin films of transition metals are used extensively in microelectronics device processing. Known methods of depositing such metal films require high temperature (>300 deg.C) and the films are often contaminated. We are exploring low-temperature (< 280 deg.C) or photo-assisted Organo-Metallic Chemical Vapor Deposition of high purity transition metal films (Pt, Ir, Rh, Cu, Ni, Co, W) (usually < 1% impurity) from hydrocarbon precursors [e.g . ([[eta]][5]-CH3C5H4)Pt(CH3)3] and similar complexes. The kinetics of the formation of the films reveals the presence of an induction period followed by autocatalysis. The mechanism of the initial reactivity of precursors with a variety surfaces is being investigated. For the deposition of refractory metals like tungsten from hydrocarbon complexes we have found co-deposition of platinum is needed to suppress carbon incorporation. Catalytic aspects of the platinum/tungsten films are also being investigated.

We are interested in the deposition of thermodynamically stable and lattice matched intermetallic conductors such as CoGa or PtGa2 on semiconductors such as GaAs. Methods using either separate sources or single-source mixed-metal complexes containing transition metals and Group III metals (Al, Ga, In) are under active investigation.