California NanoSystems Institute

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People

Diana Huffaker, Ph.D.

Director, Integrated NanoMaterials Lab

Associate Professor, Electrical Engineering

Administrator and Director, Integrated NanoMaterials Core Lab, California NanoSystems Institute

Education:

Degrees:

Ph.D., University of Texas, Austin, 1994
M.S., University of Texas, Austin, 1990
B.S., University of Arizona, 1986

Honors and Awards:

2004 Alexander Von Humboldt Fellowship
2002 Compound Semiconductor Symposium Young Scientist Award

Professional Societies:

Institute of Electrical and Electronics Engineers, Member
Materials Research Society, Member
National Security Science and Engineering Faculty Fellowships, Member
Women in Science and Engineering, Member

Certifications:

Certification Type:

2004 LEOS Board of Governors , Elected Member

Contact Information:

Work Email Address:	huffaker@ee.ucla.edu

Work Address:	BOX 951594 Los Angeles, CA 90095 UNITED STATES

Home Page:	http://www.ee.ucla.edu/~huffaker/
Work:	http://cleanenergy.ucla.edu

Fax Number:	(310) 206-4685
Work Phone Number:	(310) 825-9786

Research Interests:

Professor Huffaker's current research projects include work on crystal growth (MBE, MOCVD) and characterization of patterned and self-assembeled quantum dots in compound III-(As, P, N, Sb), III/V-Si photonics and electronic characterization of biomaterials. Dr. Huaffaker is also currently working on projects that focus on formation kinetics, coherent optical processes in nanostructures for optoelectronic devices based on newly developed materials, lattice mismatched epitaxy including MWIR lasers, III-V nanotransistors and solar cells, optical interconnects and integrated optoelectronics based on VCSEL technology.

Selected Publications:

Wong, P. S. Liang, B. L. Tatebayashi, J. Xue, L. Nuntawong, N. Kutty, M. N. Brueck, S. R. Huffaker, D. L. , Fabrication and characteristics of broad-area light-emitting diode based on nanopatterned quantum dots, Nanotechnology, 2009, 20 (3), 35302.

R. Molecke, P.S. Wong, G. Balakrishnan, and D.L. Huffaker, Anisotropic Surface Energy and Bounded Crystal Growth of GaAs Pyramids in SiO2 Wells Formed by MOCVD on GaAs (001) Substrate, Submitted to APL., 2007.

P.S. Wong, G. Balakrishnan, N. Nuntawong, L. Xue, J. Tatebayashi, A. Albrecht, P. Rotella, S.R.J. Brueck, and D. L. Huffaker, Controlled Crystal Faceting for Selective InAs Quantum Dot Nucleation, Appl. Phys. Lett., 2007 (18), 90.

R.B. Laghumavarapu, A. Moscho, N. Nuntawong, L.F. Lester, and D.L. Huffaker, Effect of strain compensation in InAs/GaAs quantum dot solar cells, submitted to Appl. Phys. Lett., 2007, L07-03487.

S.H. Huang, G. Balakrishnan, M. Mehta, A. Khoshakhlagh, L.R. Dawson and D.L. Huffaker , Epitaxial growth and formation of interfacial misfit array for tensile GaAs on GaSb, Appl. Phys. Lett., 2007 (90), 161902.

R.B. Laghumavarapu, A. Moscho, A. Khoshakhlagh, L.F. Lester, and D.L. Huffaker, GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response, Appl. Phys. Lett., 2007 (17), 90.

S.H. Huang, G. Balakrishnan, A. Khoshakhlagh, P. Li, L.R. Dawson and D.L. Huffaker, Growth and characterization of interfacial misfit arrays for AlSb on 5° miscut Si substrate, submitted to Appl. Phys. Lett., 2007.

J. Tatebayashi, A. Khoshakhlagh, G. Balakrishnan, S. Huang, M. Mehta, L. R. Dawson, and D. L. Huffaker, Lasing operation at room temperature of type-II GaSb/GaAs self-assembled quantum dots, submitted to Appl. Phys. Lett., 2007.

N. Nuntawong, J. Tatebayashi, P.S. Wong and D. L. Huffaker, Localized strain reduction in strain-compensated InAs/GaAs stacked quantum dot structures, Appl. Phys. Lett , 2007, 90, 163121.

J. Tatebayashi, R. B. Laghumavarapu, N. Nuntawong, and D. L. Huffaker, Measurement of electro-optic coefficients of 1.3 μm self-assembled InAs/GaAs quantum dots, Elect. Lett. , 2007, 43, 410-412.

A. Jallipalli, G. Balakrishnan, S.H. Huang and D.L. Huffaker, Modeling of Interfacial Misfit Array Dislocations for Highly Mismatched III-V Semiconductor Materials using Molecular Mechanics, J. Cryst. Growth , 2007, 303 (2), 449.

G. Balakrishnan, M. Mehta, M.N. Kutty, L.R. Dawson, D.L. Huffaker, Monolithically Integrated CMOS compatible III-Sb Superluminescent LED on Si (001), Electron. Lett., 2007 (43).

Tian Yang, Ling Lu, Min-Hsiung Shih and J. D. O'Brien, G. Balakrishnan and D. L. Huffaker, Room Temperature InGaSb Quantum Well Microcylinder Lasers at 2 μm Grown Monolithically on a Silicon Substrate, JVST-B, 2007, 25 (5).

M. Mehta, G. Balakrishnan, A. Jallapali, M.N. Kutty, L.R. Dawson, and D.L. Huffaker, Room-temperature operation of buffer-free GaSb/AlGaSb quantum-well diode lasers developed on a GaAs platform emitting at 1.65 μm, submitted to Photon. Techn. Lett., 2007.

J. Tatebayashi, A. Khoshakhlagh, S. H. Huang, L. R. Dawson, G. Balakrishnan, and D. L. Huffaker, Formation and Optical Characteristics of Strain-relieved, Densely Stacked GaSb/GaAs Quantum Dots, Appl. Phys. Lett., 2006 (89), 203116.

M.Mehta, G.Balakrishnan, S. Huang, A.Khoshakhlagh, A.Jallipalli, P. Patel, M.N.Kutty, L.R. Dawson and D.L. Huffaker, GaSb QW-based "Buffer-free" Vertical LED Monolithically Embedded Within a GaAs Cavity Incorporating Interfacial Misfit (IMF) Arrays, Appl. Phys. Lett., 2006 (89), 21.

J. Tatebayashi , N. Nuntawong, Y. C. Xin, P. S. Wong, S. Huang, L. F. Lester and D. L. Huffaker, Ground-state Lasing of Stacked InAs/GaAs Quantum Dots With GaP Strain-compensation Layers Grown by Metalorganic Chemical Vapor Deposition, Appl. Phys. Lett., 2006 (88), 221107.

G. Balakrishnan , S. Huang , A. Khoshaklagh , A. Jallipalli , J. Tatebayashi , L.R. Dawson and D.L. Huffaker, III/V Ratio Based Selectivity between Strained Stransky-Krastanov and Strain-Free GaSb Quantum Dots on GaAs, Appl. Phys. Lett., 2006 (89).

G. Balakrishnan, A. Jallipalli, S.H. Huang, A. Khoshakhlagh, P. Rotella, A. Amtout, S. Krishna, C.P. Haines, L.R. Dawson and D.L. Huffaker , Monolithic growth of III-Sb on Si for Integrated Photonic light Emitters, IEEE Journ. Select. Topics in Silicon Photonics, 2006 (12), 1636.

G. Balakrishnan, S.H. Huang, A. Khoshakhlagh, A. Jallipalli, P. Rotella, A. Amtout, S. Krishna, C.P. Haines, L.R. Dawson and D.L. Huffaker, Room-temperature Optically-pumped GaSb Quantum Well based VCSEL Monolithically Grown on a Si (100) Substrate, Electron. Lett. , 2006 (42).

Z. Mi, J. Yang, P. Bhattacharya, D.L. Huffaker, Self-organised quantum dots as dislocation filters: The case of GaAs-based lasers on silicon, Electronics Lett., 2006 (42), 121.

S.H. Huang, G. Balakrishnan, A. Khoshakhlagh, A. Jallipalli, L.R. Dawson, and D.L. Huffaker, Strain Relief by Periodic Misfit Arrays for Low Defect Density GaSb on GaAs, Appl. Phys. Lett., 2006 (88), 131911.

S.Birudavolu, N.Nuntawong, G.Balakrishnan, Y.C.Xin, S.Huang, S.C.Lee, S.R.J. Brueck, C.P. Hains and D.L. Huffaker, Selective Area Growth of InAs Quantum Dots Formed on a Patterned GaAs Substrate, Appl. Phys. Lett., 2004, 85, 2337-2340.

A. A. El-Emawy, S. Birudavolu, P.S. Wong, Y.-B. Jiang, H. Xu, S. Huang, and D.L. Huffaker, Formation Trends in Quantum Dot Growth using Metalorganic Chemical Vapor Deposition, J. Appl. Phys., 2003, 93, 3529-3534.